[SOLVED] Ve311 Lab #2

Description

 

1. [Common-Emitter Amplifier]

• [] Design and build a common-emitter amplifier in Proteus and on the breadboard which has a voltage gain A_υ > 10, using npn BJT 2N3904. Plot V_OUT vs V_IN. (Hint: First choose an appropriate R_C. Second, perform DC sweep to find out a V_IN at which the magnitude of slope is more than 10. At the same time, make sure the BJT is in the forward-active region. If not working, change for another R_C and repeat the DC sweep analysis again.)
• [30%] For V_in = V_IN + 0.01sin(2π10² ∙ time), plot V_out = V_OUT + υ_out vs time. Confirm that the amplitude of υ_out is equal to 01 ×

(c)  For V_in = V_IN + 0.01sin(2π10⁷ ∙ time), plot V_out = V_OUT +

υ_out vs time. Is the amplitude of υ_out still equal to 0.01 × A_υ? If not, explain the possible reasons.

2N3903, 2N3904

General Purpose Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	VCEO	40	Vdc
Collector−Base Voltage	VCBO	60	Vdc
Emitter−Base Voltage	VEBO	6.0	Vdc
Collector Current − Continuous	IC	200	mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0	mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12	W mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	−55 to +150	°C

THERMAL CHARACTERISTICS (Note 1)

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction−to−Ambient	RJA	200	°C/W
Thermal Resistance, Junction−to−Case	RJC	83.3	°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

BULK PACK            TAPE & REEL

AMMO PACK

Y      = Year

WW = Work Week

       = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

© Semiconductor Components Industries, LLC, 2012                                                                    1                                                                  Publication Order Number:

August, 2012 − Rev. 8            2N3903/D ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)	V(BR)CEO	40	−	Vdc
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0)	V(BR)CBO	60	−	Vdc
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0)	V(BR)EBO	6.0	−	Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)	IBL	−	50	nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)	ICEX	−	50	nAdc

ON CHARACTERISTICS

DC Current Gain (Note 2) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)	2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904	hFE	20 40 35 70 50 100 30 60 15 30	− − − − 150 300 − − − −	−
Collector−Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc		VCE(sat)	− −	0.2 0.3	Vdc
Base−Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)		VBE(sat)	0.65 −	0.85 0.95	Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)	2N3903 2N3904	fT	250 300	− −	MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)		Cobo	−	4.0	pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)		Cibo	−	8.0	pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	2N3903 2N3904	hie	1.0 1.0	8.0 10	k
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	2N3903 2N3904	hre	0.1 0.5	5.0 8.0	X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)	2N3903 2N3904	hfe	50 100	200 400	−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)		hoe	1.0	40	mhos
Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)	2N3903 2N3904	NF	− −	6.0 5.0	dB

SWITCHING CHARACTERISTICS

Delay Time	(VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc)		td	−	35	ns
Rise Time			tr	−	35	ns
Storage Time	(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)	2N3903 2N3904	ts	− −	175 200	ns
Fall Time			tf	−	50	ns

2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.

ORDERING INFORMATION

Device	Package	Shipping†
2N3903RLRM	TO−92	2000 / Ammo Pack
2N3904	TO−92	5000 Units / Bulk
2N3904G	TO−92 (Pb−Free)	5000 Units / Bulk
2N3904RLRA	TO−92	2000 / Tape & Reel
2N3904RLRAG	TO−92 (Pb−Free)	2000 / Tape & Reel
2N3904RLRM	TO−92	2000 / Ammo Pack
2N3904RLRMG	TO−92 (Pb−Free)	2000 / Ammo Pack
2N3904RLRP	TO−92	2000 / Ammo Pack
2N3904RLRPG	TO−92 (Pb−Free)	2000 / Ammo Pack
2N3904RL1G	TO−92 (Pb−Free)	2000 / Tape & Reel
2N3904ZL1	TO−92	2000 / Ammo Pack
2N3904ZL1G	TO−92 (Pb−Free)	2000 / Ammo Pack

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

300 ns

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

5 5

1.0       2.0  3.0    5.0 7.0 10        20   30     50 70 100      200                1.0       2.0  3.0    5.0 7.0 10        20   30     50 70 100       200

I_C, COLLECTOR CURRENT (mA)                                                         I_C, COLLECTOR CURRENT (mA)

                                    Figure 5. Turn−On Time                                                                       Figure 6. Rise Time

Figure 7. Storage Time                                                                         Figure 8. Fall Time

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

• 0

0.1    0.2    0.4       1.0    2.0    4.0       10     20     40       100                  0.1    0.2    0.4       1.0    2.0     4.0       10     20     40       100

f, FREQUENCY (kHz)                                                                 R_S, SOURCE RESISTANCE (k OHMS)

Figure 9.                                                                                                Figure 10.

h PARAMETERS

30                                                                                                              1

0.1        0.2   0.3     0.5         1.0         2.0   3.0     5.0         10                  0.1        0.2   0.3     0.5         1.0         2.0  3.0     5.0         10

IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA) Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance

IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

I_C, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

I_B, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

0                                                                                                           -2.0

1.0       2.0          5.0       10       20            50       100      200                   0      20     40     60     80    100   120   140    160   180  200

I_C, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages

I_C, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients

3                               3

STRAIGHT LEAD    BENT LEAD

T

STRAIGHT LEAD

1. 2. 3. 4.

DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. CONTROLLING DIMENSION: INCHES. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.

NOTES:

DIM	INCHES		MILLIMETERS
	MIN	MAX	MIN	MAX
A	0.175	0.205	4.44	5.21
B	0.290	0.310	7.37	7.87
C	0.125	0.165	3.18	4.19
D	0.018	0.021	0.46	0.53
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.018	0.024	0.46	0.61
K	0.500	—	12.70	—
L	0.250	—	6.35	—
N	0.080	0.105	2.04	2.66
P	—	0.100	—	2.54
R	0.135	—	3.43	—
V	0.135	—	3.43	—

	NOTES:
BENT LEAD	1. 2. 3. 4.	DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. CONTROLLING DIMENSION: INCHES. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

DIM	INCHES		MILLIMETERS
	MIN	MAX	MIN	MAX
A	0.175	0.205	4.44	5.21
B	0.290	0.310	7.37	7.87
C	0.125	0.165	3.18	4.19
D	0.018	0.021	0.46	0.53
G	0.094	0.102	2.40	2.80
J	0.018	0.024	0.46	0.61
K	0.500	—	12.70	—
N	0.080	0.105	2.04	2.66
P	—	0.100	—	2.54
R	0.135	—	3.43	—
V	0.135	—	3.43	—

SECTION X−X

 

STYLES ON PAGE 2

DOCUMENT NUMBER:	98AON52857E	Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.
DESCRIPTION:	TO−92 (TO−226) 1 WATT		PAGE 1 OF 2
ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2019                                                                                                                                                                                          www.onsemi.com

 

STYLE 1:

PIN 1. EMITTER

2. BASE
3. COLLECTOR

STYLE 6:

PIN 1.  GATE

2. SOURCE & SUBSTRATE
3. DRAIN

STYLE 11:

PIN 1.  ANODE

2. CATHODE & ANODE
3. CATHODE

STYLE 16:

PIN 1.  ANODE

2. GATE
3. CATHODE

STYLE 21:

PIN 1. COLLECTOR

2. EMITTER
3. BASE

STYLE 26:

PIN 1.  V_CC

2. GROUND 2
3. OUTPUT

STYLE 31:

PIN 1.  GATE

2. DRAIN
3. SOURCE

STYLE 2:
PIN 1.	BASE
2.	EMITTER
3. STYLE 7:	COLLECTOR
PIN 1.	SOURCE
2.	DRAIN
3.	GATE

STYLE 12:

PIN 1. MAIN TERMINAL 1 2. GATE

3. MAIN TERMINAL 2

STYLE 17:

PIN 1. COLLECTOR

2. BASE
3. EMITTER

STYLE 22:

PIN 1. SOURCE

2. GATE
3. DRAIN

STYLE 27:

PIN 1.  MT

2. SUBSTRATE
3. MT

STYLE 32:

PIN 1.  BASE

2. COLLECTOR
3. EMITTER

STYLE 3:
PIN 1.	ANODE
2.	ANODE
STYLE 8:	CATHODE
PIN 1.	DRAIN
2.	GATE
3.	SOURCE & SUBSTRATE

CASE 29−10 ISSUE A

STYLE 13:

PIN 1.  ANODE 1

2. GATE
3. CATHODE 2

STYLE 18:

PIN 1.  ANODE

2. CATHODE
3. NOT CONNECTED

STYLE 23:

PIN 1.  GATE

2. SOURCE
3. DRAIN

STYLE 28:

PIN 1. CATHODE

2. ANODE
3. GATE

STYLE 33:

PIN 1. RETURN

2. INPUT
3. OUTPUT

STYLE 4:
PIN 1.	CATHODE
2.	CATHODE
3. STYLE 9:	ANODE
PIN 1.	BASE 1
2.	EMITTER
3.	BASE 2

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR
3. BASE

STYLE 19:

PIN 1.  GATE

2. ANODE
3. CATHODE

STYLE 24:

PIN 1. EMITTER

2. COLLECTOR/ANODE
3. CATHODE

STYLE 29:

PIN 1. NOT CONNECTED

2. ANODE
3. CATHODE

STYLE 34:

PIN 1.  INPUT

2. GROUND
3. LOGIC

DATE 08 MAY 2012

STYLE 5:

PIN 1.  DRAIN

2. SOURCE
3. GATE

STYLE 10:

PIN 1. CATHODE

2. GATE
3. ANODE

STYLE 15:

PIN 1.  ANODE 1

2. CATHODE
3. ANODE 2

STYLE 20:

PIN 1. NOT CONNECTED

2. CATHODE
3. ANODE

STYLE 25:

PIN 1.  MT 1

2. GATE
3. MT 2

STYLE 30:

PIN 1.  DRAIN

2. GATE
3. SOURCE

STYLE 35:

PIN 1.  GATE

2. COLLECTOR
3. EMITTER

TO−92 (TO−226) 1 WATT

 

DOCUMENT NUMBER:	98AON52857E	Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.
DESCRIPTION:	TO−92 (TO−226) 1 WATT		PAGE 2 OF 2
ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2019                                                                                                                                                                                            www.onsemi.com

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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