[SOLVED] Ve311 Homework #4

Description

1. [MOSFET DC Biasing, Use the drain current equations below.

Don’t consider channel-length modulation and body effect. Assuming W_drawn / L_drawn = 20 µm / 2 µm, sketch I_X of M₁ as a function of V_X increasing from 0 V to V_DD = 5 V. (Note: finish this part before the midterm exam)

 (NMOS in triode region)

       (NMOS in saturation region)

           (PMOS in triode region)

       (PMOS in saturation region)

2. [MOSFET Small-Signal Model] Assume W_drawn / L_drawn = 20 µm / 2 µm.
3. (a)  Use Pspice to plot the drain current of a NMOS as a function of V_DS increasing from 0 V to 5 V, at V_GS = 1 V, 1.5 V and 2 V. Label the off, triode and saturation regions for each curve. Derive r_o from each curve in the saturation region and compare it with hand-calculation result.
4. (b) Use Pspice to plot the drain current of a NMOS as a function of V_GS increasing from 0 V to 3 V, at V_DS = 5 V. Derive gm from the curve when V_GS = 2 V and compare it with hand-calculation result.

sum permittivity (𝛜_𝐨) = 𝟖. 𝟖𝟓 × 𝟏𝟎^−𝟏𝟐 (F / m)

Silicon oxide dielectric constant (𝛜_𝐫) = 𝟑. 𝟗