[SOLVED] VE320 Intro to Semiconductor Devices Homework 2

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Exercise 2.1

Two possible valence bands are shown in the E versus k diagram given in Figure 1. State which band will result in the heavier hole effective mass; state why.

Figure 1: Valence bands for Problem 2.1.

Exercise 2.2

(a) The forbidden bandgap energy in GaAs is 1.42eV. (i) Determine the minimum frequency of an incident photon that can interact with a valence electron and elevate the electron to the conduction band. (ii) What is the corresponding wavelength? (b) Repeat part ( a ) for silicon with a bandgap energy of 1.12eV.

Exercise 2.3

The energy-band diagram for silicon is shown in Figure 2. The minimum energy in the conduction band is in the [100] direction. The energy in this one-dimensional direction near the minimum value can be approximated by

E = E0 E1 cosα(k k0)

where k0 is the value of k at the minimum energy. Determine the effective mass of the particle at k = k0 in terms of the equation parameters.

Figure 2: Energy-band structures of Si

Exercise 2.4

  • Determine the total number (#/cm3) of energy states in silicon between Ev and Ev − 3kT at (i) T = 300 K and (ii) T = 400 K.
  • Repeat part (a) for GaAs.

Exercise 2.5

(a) For silicon, find the ratio of the density of states in the conduction band at E = Ec + kT to the density of states in the valence band at E = Ev kT. (b) Repeat part (a) for GaAs.

Exercise 2.6

Consider the energy levels shown in Figure 3. Let T = 300 K.

(a) If E1 EF = 0.30eV, determine the probability that an energy state at E = E1 is occupied by an electron and the probability that an energy state at E = E2 is empty. (b) Repeat part (a) if EF E2 = 0.40eV.

Figure 3: Energy levels for Problem 2.6

Exercise 2.7

  • The carrier effective masses in a semiconductor are and.

Determine the position of the intrinsic Fermi level with respect to the center of the bandgap at T = 300 K.

  • Repeat part (a) if and.

Exercise 2.8

Silicon at T = 300 K is doped with boron atoms such that the concentration of holes is p0 = 5 × 1015 cm−3.

  • Find EF Ev.
  • Determine Ec EF.
  • Determine n0.
  • Which carrier is the majority carrier?(e) Determine EFi EF.